Metal-Semiconductor Schottky Barrier
I am simulating an Al-Ge-Cu asymmetric MSM photodetector which has two Schottky junctions. My questions are:
- In Lumerical CHARGE solver, how barrier height is determined at the metal-semiconductor Schottky junctions ?
- Does the solver takes into account the Fermi level pinning effect? For example, I found in papers that Ge-metal Schottky junctions are severely affected by Fermi level pinning effect and Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function [A]. Does the solver physics takes care of this?
- If answer to Qs 2 is 'no', how I may incorporate the Fermi level pinning effect in my model?
- Lastly, in the CHARGE solver, the default work function of Ge is 4.5 eV. Can you provide any reference/explanation of how this number is used? If I use moderate doping level of ~10^16 cm-3, can 4.5eV of workfunction be used for Ge in my model?
[A] APPLIED PHYSICS LETTERS 89, 252110 (2006)