MOSFET Schichman-Hodges Model

Ra_jRa_j Member Posts: 1


I am trying to use the Mosfet level 1 component with Ansys circuit design. I am a little confused about what values I have to use in the instance parameter. For example, for drain and source diffusion area, etc I cannot find these values in the component datasheet either. Could someone please let me know how these parameters are calculated or any related information?


Best Answer

  • ddvorscaddvorsca Posts: 12Member
    Accepted Answer

    Unfortunately those properties are not calculated and do need to come from the model vendor themselves. If they do not appear on the data sheet, it may be worth following up with the vendor to see if they have a spice model available for the MOSFET part in question.


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