junqianl
Subscriber
Yes, the device I am currently importing is a simple PIN structure with 2 heavy doping layers under the metal contacts and a background P-doping so I am having trouble trying to find the root issue. The net doping profile (top image) is quite smooth so I don't see why the space charge distribution (2nd image) is so uneven. I have tried importing the structure into Sentaurus device simulations as well and don't see these issues.