Ok, thank you for the fast reply.
So if my material is silicon-rich silicon nitride I need to insert the desired third order susceptibility and using as base material the nearer included in the Material Database ( I think is the silicon-nitride ) and fitting it to keep near to the desired value.
Is it right?
For nonlinear analysis, I want to ask how I can make sure to launch very high power values (like 10 W or 100 W) because it is not clear how to modify the source amplitude to make sure of doing an analysis for different high power values.
Thank you in advance.
You are navigating away from the AIS Discovery experience