The simulation region already has a mesh constraint for the thin layer of 10 nm, but I don't know why it's not enough to define the doping region well. The transition for the doping of that layer falls in the 10 nm layer leading to a distorted and no-sense band alignment. For a very complicated mesh that defines better the doping region the simulation diverges. Do you have any suggestions to sufficiently define the doping with the mesh?
If I reduce the sensitivity or the iteration limit the mesh constraint is ignored by the software
Thanks in advance
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