Atefeh Sadrimofakham

In Chemical Mechanical Polishing process, we polish a Silicon Oxide/Nitride wafer on the Polyurthane pad. The ununiformity on the wafer surface will be decreased  and flattened based on this process. So, I wonder if is there any possibilty to calculate the amount of the Material Removal Rate from the wafer surface? (It is something like erosion.) Here is more information about the CMP process.