In Chemical Mechanical Polishing process, we polish a Silicon Oxide/Nitride wafer on the Polyurthane pad. The ununiformity on the wafer surface will be decreased and flattened based on this process. So, I wonder if is there any possibilty to calculate the amount of the Material Removal Rate from the wafer surface? (It is something like erosion.) https://en.wikipedia.org/wiki/Chemical-mechanical_polishing. Here is more information about the CMP process.
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