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Fowler Nordheim tunneling from silicon to vacuum

    • Shafayeth Jamil

      I am modeling light-assisted e-hole pair generation in silicon using ANSYS LUMECIAL and calculating emission current from the silicon utilizing a high voltage source in ANSYS Charge. There is a vacuum between the silicon and the high-voltage source. Here, I expect Fowler Nordheim type tunneling of electrons from the silicon surface to the Anode of the high-voltage source. My questions are:
      1. Can Ansys Charge calculate field emission due to Fowler Nordheim type tunneling?
      2. What is the best material to model Vacuum in the simulation region of Ansys Charge? Should I use an insulator or a semiconductor? What should be the material properties of the  insulator or semiconductor to model Vacuum?

    • Guilin Sun
      Ansys Employee

      the CHARGE solver does not include  Fowler Nordheim tunneling effect. Please file a feature request: 

      New Feature vote:   Vote new features, and file your feature request

      CHARGE needs semicodutor materials. metals are simplied to be PEC which is not included in the simulation. Vacuum is "Insulator" as it is not semicoductor. Insulator does not allow any charger passing. If it is used for tunneling, you may need to modify it into light semicondutor https://optics.ansys.com/hc/en-us/articles/360034919133-Tips-for-creating-a-new-semiconductor-material

      If you have further questions regarding to Lumerical products, please post at https://forum.ansys.com/forums/forum/discuss-simulation/photonics/ 




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