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June 14, 2023 at 8:10 am
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June 14, 2023 at 5:56 pm
Guilin Sun
Ansys EmployeeThe physics of the damage might be due to the induced high temerature from current (Joule heating). and it is the geometry deformation, right?
Unfortunately the optics solvers are designed for simulation of regular devices at normal working conditions; the HEAT solver is designed to get the temperature for solid with fixed geometry. Even though the temperature can be as high as 1000C it will NOT show any "damage".
So you may need other tools,for exmaple Ansys Structural analysis:
https://forum.ansys.com/forums/topic/how-to-observe-deformation-with-different-temperature/
https://courses.ansys.com/index.php/courses/thermal-strain/lessons/deformation-under-thermal-condition-lesson-3/
or deduct from the temperature. You could also search online for this topic. If you find a solution, it is appreciated if you can share the info here.
Thank you!
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June 15, 2023 at 2:40 am
Alisa Bannaron
SubscriberHi!
Thank you for the response.
Sorry my question was a bit misleading. It's more like the loss induced by TPA effect due to high input power at an operating wavelength of 1.55 um for example. As from this ref (chrome-extension://efaidnbmnnnibpcajpcglclefindmkaj/https://par.nsf.gov/servlets/purl/10188756), how can I set input power so that I could probably observe the output power?
Thank you so much!
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June 15, 2023 at 4:12 pm
Guilin Sun
Ansys EmployeeIf this mechanism can be represented by Chi3, then please refer to https://optics.ansys.com/hc/en-us/articles/360034394734
First you set the proper material property, and then get the transmission/reflection from the simulation; you can sweep the input power and measure the transmission. the output power is the transmission times sourcepower at the specified wavelengths.
However if it cannot be modeled by the Ramann Chi3, you will need to create your own model. The following two papers might be helpful:
- Integrated Nanoplasmonic Waveguides and Devices for All-Optical Nanocircuitry
- FDTD Analysis of Two-Photon Absorption and Free-Carrier Absorption in Si High-Index-Contrast Waveguides
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