Electronics

Electronics

MOSFET Schichman-Hodges Model

    • Ra_j
      Subscriber

      HI,

      I am trying to use the Mosfet level 1 component with Ansys circuit design. I am a little confused about what values I have to use in the instance parameter. For example, for drain and source diffusion area, etc I cannot find these values in the component datasheet either. Could someone please let me know how these parameters are calculated or any related information?

      Thanks

    • Praneeth
      Ansys Employee

      Please go through the following link for detailed information on the parameters definition for MOSFET level -1 - Ansys Electronics 2021 R2 - Nexxim Circuit Analyses.
      All the very best.
    • Ra_j
      Subscriber
      Hi @pmunaga Thanks for the response.
      The link you have sent I have already seen that and it doesn't really tell how what values I have to put in those parameters. For example, in AD what value do I have to put and is there a way to calculate it? They do not mention these parameters in the commercial MOSFET datasheet.
    • Dan Dvorscak
      Ansys Employee
      Unfortunately those properties are not calculated and do need to come from the model vendor themselves. If they do not appear on the data sheet, it may be worth following up with the vendor to see if they have a spice model available for the MOSFET part in question.
    • Ra_j
      Subscriber
      Hi ddvorsca Thank for the response.
      Can we also import the vendor's MOSFET spice model in the Ansys circuit design?

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