No change in neff
I have designed a silicon heater using DEVICE and my goal is to simulate the heater from 0 to 5V and to observe the change in temperature. Then I would like to save this data in a .mat file and export this data into MODE and observe the change in the effective index as I bias the heater. It is similar to the example of the PN depletion phase shifter on the Ansys Lumerical website:
My DEVICE simulation works as expected but when I simulate it in MODE and look for the change in the effective index, I do not see any change and the value of the effective index stays the same across the voltage bias. I don't know what I'm doing wrong. I have attached a drive link where I have the device and mode simulations. Can you please look into it and let me know what the erros is. Thanks!