Thermal Phase shifter with doped silicon resistor
I am trying to simulate phase shifter by placing a doped silicon resistor 0.6um away from waveguide core. In HEAT, I am biasing this resistor similar to Aluminum wire ohmic loss simulation example. I replaced the Aluminum wire with a silicon slab and used constant doping with 1e20 concentration. When I simulate this, I am not seeing any temperature change. Can someone please advice on this?