MQW Edge Emitting Laser - How to add cladding and buffer layers?
I am currently modelling MQW lasers based on the edge emitting laser example project. Am I able to add an upper, p-doped, and lower,n-doped, AlInAs cladding layer? In addition add a InP buffer layer between the substrate and quantum wells and InP, GaInAs highly doped p-contact layers?
Any guidence on how to add/change the above specifiactions would be greatly appreciated.